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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - FEB 94 VN2222LL S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb = 25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb = 25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 60 150 1 40 400 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Body Leakage Zero Gate Voltage Drain Current (1) Static Drain Source On State Voltage (1) Static Drain Source On State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Time (2)(3) Turn-Off Time (2)(3) SYMBOL BVDSS VGS(th) IGSS IDSS 750 3.75 1.50 7.5 100 60 25 5 10 10 MIN. 60 0.6 2.5 100 10 500 MAX. UNIT V V nA A A mA V V mS pF pF pF ns ns VDD 15V, ID=600mA VDS=25 V, VGS=0V f=1MHz CONDITIONS. ID=100A, VGS=0V ID=1mA, VDS= VGS VGS= 30V, VDS=0V VDS=48 V, VGS=0V =48 V, VGS=0V, T=125C VDS VDS=10 V, VGS=10V VGS=10V,ID=500mA VGS=5V, ID=200mA VGS=10V,ID=500mA VDS=10V,ID=500mA On State Drain Current(1) ID(on) VDS(on) RDS(on) gfs Ciss Coss Crss t(on) t(off) (1) Measured under pulsed conditions. Width=300s. Duty cycle 2%, (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3-91 |
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